preliminary solid state devices, inc. spmr467-02 features: data sheet #: PM0009b maximum ratings discharge current (schottky's) amps ? low forward discharge voltage (v fd ) ? guaranteed minimum charge voltage (v fc ) ? low mechanical stress assembly design ? low assembly thermal resistance ? s - level prescreened devices ? high strength terminal stud attachement ? other terminal styles available 300 amps discharge 60 amps charge current batery bypass power module designer's data sheet 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. characteristic symbol value unit i d 300 discharge surge current (non-repetitive, t = 8.3 ms pulse) amps 2000 i dp storage temperature range -65 to +175 t stg operating temperature range o c t op thermal resistance, junction to base (discharging leg) o c/w 0.25 1 jbd o c charge current (rectifiers) amps i c 60 -65 to +125 thermal resistance, junction to base (charging leg) o c/w 0.45 1 jbc thermal resistance, junction to case (schottky discrete) o c/w 0.20 1 jcs thermal resistance, junction to case (rectifier discrete) o c/w 0.60 1 jcr aspm electrical schematic
solid state devices, inc. preliminary symbol units min max 14005 stage road * santa fe springs, ca 90670 phone: (562) 404-4474 * fax: (562) 404-1773 electrical characteristics @ t j =25 o c (unless otherwise specified) discharge voltage drop (i d = 450a) rating symbol min max unit package outline: aspm t j = 25 o c t j = 25 o c charge voltage drop v fc1 v fc2 v fc3 (i c = 75ma, t amb = 25 o c) (i c = 60a, t amb = 25 o c) (i c = 60a, t amb = 100 o c) - 3.50 3.40 volts spmr467-01 1.6 - - insulation resistance (all terminals to base @1000v) r insul1 1-g s insulation resistance (between cells @1000v) r insul2 1-g s (t amb = 25 o c) (t amb = 100 o c) v fd1 v fd2 0.80 0.70 volts - - discharge v f matching a vfd1 - 10 mvolts
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